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UF2820R
RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * *
N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 4 61 200 -55 to 150 2.86 Units V V A W C C C/W
TYPICAL DEVICE IMPEDANCES
F (MHz) 100 300 500 ZIN () 8.0-j16.0 5.5-j8.0 4.0-j3.8 ZLOAD () 12.0+j6.0 9.3+j6.0 4.5+j4.5
VDD=28V, IDQ=100 mA, POUT =20.0 W
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP D VSWR-T Min 65 2.0 .500 10 50 Max 1.0 1.0 6.0 45 30 8 20:1 Units V mA A V S pF pF pF dB % Test Conditions VGS = 0.0 V , IDS = 5.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 100.0 mA VDS = 10.0 V , IDS 1000.0 mA , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz VDD = 28.0 V, IDQ = 100.0 mA, POUT = 20.0 W F =500 MHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2820R
RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
Typical Broadband Performance Curves GAIN VS FREQUENCY VDD =28 V IDQ=100 mA POUT =20 W EFFICIENCY VS FREQUENCY VDD=200 V IDD =100 mA POUT =20 W
M/A-COM Products Released; RoHS Compliant
25
70 65 60 55 50 100
20
15
10 100
EFFICIENCY (W)
GAIN (dB)
200
300
400
500
200
300
400
500
FREQUENCY (MHz)
FREQUENCY (MHz)
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =100 mA
25
100M
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =100 mA
25 POWER OUTPUT (W) 20 15 10
500MHz 400MHz
POWER OUTPUT (W)
20 15 10 5 0 0.1 0.2
200MHz 300MHz
600MHz
5 0
0.3 0.5 1.0 POWER INPUT (W)
1.5
2.0
0.1
0.2
0.3
0.5
1.0
1.5
2.0
POWER INPUT (W)
1.4 NOISE FREQUENCY (dB) 1.2 1 0.8 0.6 100
NOISE FIGURE VS FREQUENCY VDD =28 V IDQ =100 mA
200
300
400
500
FREQUENCY (MHz)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2820R
RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products Released; RoHS Compliant
TEST FIXTURE ASSEMBLY
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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